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Crestec CABL-UH（130kV）EBL電子束光刻機(jī)
There is less forwardscatter of EB resist due to higher acceleration voltage. CABL-UH model has more accuracy less than 10nm. You can select 90kV, 110kV or 130kV due to your budget.
Beam diameter: <1.6 nmΦ
Accerelation Voltage: 130 kV, 110 kV or 90 kV
Stage size: 8 inch wafer (you can use any other wafers less than 8 inch wafer)
產(chǎn)品描述
Special Features
◆ Vacc: 130kV Max (25-130kV, 5kV steps)
◆ Single-Stage Acceleration capability up to 130kV to minimize EOC size
◆ Micro-Discharge Free Electron Gun
◆ Beam Diameter: >1.6nm
◆ Electrostatic Lens between emitter and anode is designed to achieve very
low aberration and short-rang crossover image at the center of blanking electrodes
◆ Ultra-stable write capability is achieved using dual thermal controllers
Specifications
|
Electron Emitter/ |
TFE (ZrO/W)/25 to 130kV |
|
Min. beam diameter |
1.6nm |
|
Scan method |
Vector scan (x, y) (Standard) |
|
Advanced lithography |
Field size modulation lithography, axial symmetry pattern lithography |
|
Field size |
sq. 30μm, sq. 60μm, sq. 120μm, sq. 300μm, sq. 600μm, sq. 1000μm |
|
Work piece size |
4，6，8inchΦ (work pieces of other sizes and other shapes can be mounted with our flexible contrivances) |
|
CAD software |
Dedicated CAD (Standard), GDS II conversion (Optiional)， |
|
OS |
Windows |
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